Electric-field and space-charge distributions in InAs/GaAs quantum-dot infrared photodetectors: ensemble Monte Carlo particle modeling

Monte-Carlo Modeling of Electron Kinetics in Room Temperature Quantum-Dot Photodetectors

Results of our many-particle Monte-Carlo modeling of kinetics and transport of electrons in InAs/GaAs quantum-dot infrared photodetectors are reviewed. We studied the dependence of the electron capture time on the electric field at different heights of the potential barriers around the dots. The capture time is almost independent on the electric field up to a critical field about 1 kV/cm, and t...

Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...

“N” structure for type-II superlattice photodetectors

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Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer

Quantum-dot infrared photodetectors: a review

Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (≥150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be re...